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| MMBD1701/A / 1703/A / 1704/A / 1705/A Discrete POWER & Signal Technologies MMBD1701/A / 1703/A / 1704/A / 1705/A 3 CONNECTION DIAGRAMS 3 1 85 2 1701 3 3 1703 1 2 NC 3 1 3 2 2 1704 1705 SOT-23 1 MMBD1701 MMBD1703 MMBD1704 MMBD1705 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 2 1 2 High Conductance Low Leakage Diode Sourced from Process 1T. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Tstg TJ Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1.0 second Storage Temperature Range Operating Junction Temperature TA = 25C unless otherwise noted Parameter Value 20 50 150 150 250 -55 to +150 150 Units V mA mA mA mA C C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max MMBD1701/A /1703/A-1705/A* 350 2.8 357 Units mW mW/C C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 (c)1997 Fairchild Semiconductor Corporation MMBD1700 Rev. B MMBD1701/A / 1703/A / 1704/A / 1705/A High Conductance Low Leakage Diode (continued) Electrical Characteristics Symbol BV IR VF TA = 25C unless otherwise noted Parameter Breakdown Voltage Reverse Current Forward Voltage Test Conditions IR = 5.0 A VR = 20 V IF = 10 A IF = 100 A IF = 1.0 mA IF = 10 mA IF = 20 mA IF = 50 mA VR = 0, f = 1.0 MHz IF = IR = 10 mA IRR = 1.0 mA, RL = 100 IF = IR = 10 mA IRR = 1.0 mA, RL = 100 Min 30 Max 50 Units V nA mV mV mV mV mV V pF pS nS 420 520 640 760 810 0.89 CO TRR Diode Capacitance Reverse Recovery Time MMBD1701-1705 MMBD1701A-1705A 500 610 740 880 950 1.1 1.0 700 1.0 Typical Characteristics REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA VR - REVERSE VOLTAGE (V) 60 Ta= 25C REVERSE CURRENT vs REVERSE VOLTAGE IR - 1 to 22 V IIR - REVERSE CURRENT (nA) R 10 Ta= 25C 5 50 0 1 40 1 2 3 5 10 20 30 IR - REVERSE CURRENT (uA) 50 100 2 3 5 10 VR - REVERSE VOLTAGE (V) 20 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA V F - FORWARD VOLTAGE (mV) 600 550 500 450 400 350 300 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 Ta= 25C FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA V F - FORWARD VOLTAGE (mV) 850 800 750 700 650 600 550 0.1 0.2 0.3 0.5 1 23 5 I F - FORWARD CURRENT (mA) 10 Ta= 25C MMBD1701/A / 1703/A / 1704/A / 1705/A High Conductance Low Leakage Diode (continued) Typical Characteristics (continued) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 200 mA V F - FORWARD VOLTAGE (V) 1.6 Ta= 25C CAPACITANCE vs REVERSE CURRENT VR - 0 to 15 V 1 CAPACITANCE (pF) 0.9 0.8 0.7 0.6 0.5 Ta= 25C 1.4 1.2 1 0.8 10 20 30 50 100 I F - FORWARD CURRENT (mA) 200 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 P - POWER DISSIPATION (mW) D Power Dissipation, Average Rectified Current (Io), Forward Current (I F) & Ambient Temperature (T ) A PD - POWER DISSIPATION (mW) 250 P D Power Derating Curve 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Io - AVERAGE TEMPERATURE 175 200 DO-7 SOT-23 200 I R -P OW 150 100 50 0 DI -C SS ON IPA TIN OU TI ON SF OR -m WA W RD CU RR EN TIo - AVER mA AGE R ECTIFIED CURREN T - mA ER 0 25 50 75 100 125 150 o T A- AMBIENT TEMPERATURE ( C) 175 |
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